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| CE CHENYI ELECTRONICS FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the Mini-MELF case with the type designation LL4448 1N4448 SMALL SIGNAL SWITCHING DIODE MECHANICAL DATA . Case: MinMelf glass case(SOD- 80) . Weight: Approx. 0.05gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbol Reverse voltage Peak reverse voltage Average rectified current, Half wave rectification with Resistive load at TA=25 and F 50Hz IFSM Ptot TJ VR VRM IAV Value 75 100 1501) Units Volts Volts mA Surge forward current at t<1S and TJ=25 Power dissipation at TA=25 Junction temperature Storage temperature range 500 5001) 175 -65 to + 175 mW mW TSTG 1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35) ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbols Forward voltage at IF=5mA at IF=10mA Leakage current at VR=20V at VR=75V at VR=20V, TJ=150 Junction capacitance at VR=VF=0V Reverse breakdown voltage tested with 100 A puse Reverse recovery time from IF=10mA to IR=1mA, VR=6V, RL=100 Thermal resistance junction to ambient Rectification efficience at f=100MHz,VRF=2V R JA Min. 0.62 Typ. Max. 0.72 1 25 5 50 4 Units V V nA A A pF V VF VF IR IR IR CJ V(BR)R trr 100 4 ns 3501) 3501) 0.45 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3 CE CHENYI ELECTRONICS 1N4448 SMALL SIGNAL SWITCHING DIODE RATINGS AND CHATACTERISTIC CURVES LL4448 FIG.2-DYNAMIC FORWARD RESISTANCE FLG.1-FORWARD CHARACTERISTICS VERSUS FORWARD CURRENT FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG.4-RELATIVE CAPACITANCE VERSUS VOLTAGE Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 3 CE CHENYI ELECTRONICS 1N4448 SMALL SIGNAL SWITCHING DIODE FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 3 |
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